Development and Qualification of a Highly Flexible Fully Depleted SOI-Technology (22FDXTM) for Ultra Low Power Computing

One of the key challenges for completely energy autarkic or mobile Internet of Things (IoT) devices is their power consumption during stand-by and their peak energy demand during communication activity. The 22FDXTM technology platform developed in the PRIME project will provide the perfect match for this new application space. This next generation silicon on insulator (SOI) technology allows for an active tailoring of the stand-by power and peak performance of the logic devices. This new feature is provided by the extremely thin buried oxide underneath the SOI, which allows for a threshold voltage control of the transistor via the so called back bias. However, this ultra-thin buried oxide requires new integration concepts and unit processes as well as the development of new reliability characterization and metrology techniques. All this topics are covered within PRIME project, which as a first success can announce the completion of the base line 22FDXTM technology including active devices in SOI and passive devices in the substrate region (hybrid). Further emphasis will be directed towards RF functionality and low noise options.

 

Bring-Up of the Highly Reliable STT-MRAM Technology as a Value-Adding eNVM Solution for 22FDXTM Technology Platform

 

Embedded non-volatile memory concepts become increasingly important building blocks for system on chip (SoC) solutions. Together with ultra-low power logic platforms such as 22FDXTM they form the back-bone of the current and envisioned IoT application space. By this fusion of logic and non-volatile memory on the same chip, cost and form factor can be minimized, whereas energy efficiency and speed can be maximized. Within PRIME project the in terms of reliability highly promising spin transfer torque magnetic random access memory (STT-MRAM) is developed and tailored to fit the thermal budget and access device requirements of the 22FDXTM. As a first highlight a stack design with back-end of line (BEoL) thermal stability and tunneling magneto resistance (TMR) of up to 200% can be reported.

 

Bring-Up of the Ultra-Low-Cost RRAM Technology as a Value-Adding eNVM Solution for 28nm Technology Platform and Beyond

More info to follow....